to ? 126 1. base 2. collector 3. emitter to-126 plastic-encapsulate transistors TIP29 series transistor (npn) features z designed for use in general purpose amplifier and switching applications maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit TIP29 40 TIP29a TIP29b collector-base breakdown voltage v (br)cbo i c =100a,i e =0 TIP29c v TIP29 40 TIP29a 60 TIP29b 80 collector-emitter breakdown voltage v (br)ceo i c =30ma,i b =0 TIP29c 100 v emitter-base breakdown voltage v (br)ebo i e =100a,i c =0 5 v v ce =30v,i b =0 TIP29/29a 0.3 collector cut-off current i ceo v ce =60v,i b =0 TIP29b/29c ma v ce =40v,v eb =0 TIP29 200 v ce =60v,v eb =0 TIP29a 200 v ce =80v,v eb =0 TIP29b 200 collector cut-off current i ces v ce =100v,v eb =0 TIP29c 200 a symbol parameter value unit TIP29 TIP29a TIP29b v cbo collector-base voltage TIP29c 40 60 80 100 v TIP29 TIP29a TIP29b v ceo collector-emitter voltage TIP29c 40 60 80 100 v v ebo emitter-base voltage 5 v i c collector current(dc) 1 a i cp collector current(pulse) 3 a p c collector power dissipation 1.25 w r ja thermal resistance from junction to ambient 100 / w t j junction temperature 150 t stg storage temperature -55~+150 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
emitter cut-off current i ebo v eb =5v,i c =0 1 ma h fe(1) * v ce =4v, i c =0.2a 40 dc current gain h fe(2) * v ce =4v, i c =1a 15 75 collector-emitter voltage v ce(sat) * i c =1a,i b =125ma 0.7 v base-emitter saturation voltage v be * v ce =4v,i c =1a 1.3 v transition frequency f t v ce =10v,i c =200ma 3 mhz *pulse test: pulse width 300 s, duty cycle 2.0%. 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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